| 摘要 |
PURPOSE:To obtain the heat treatment jig enabled to unify on the whole rgion of a wafer film thickness and quality of a film to be generated by a method wherein thermal capacity of a susceptor consisting of a quartz plate larger than the wafer is utilized. CONSTITUTION:Thickness of the susceptor 10 is made to from several times to ten several times of thickness of the wafer 1 to enlarge thermal capacity, and is used as a buffer to make temperature variation received by the wafer 1 as to become gently at heating time when the heat treatment jig 8 is inserted in a core tube, and at cooling time when the jig is taken out from the core tube. Moreover, to make the buffer effect to the maximum, gaps 13 between nails 12 and a holding face 11 are made small, and the wafer 1 is made as to adhere closely to the holding face 11. Moreover, the circumferential edge part of the susceptor 10 is protruded further than the circumferential edge part of the wafer 1 so as to make the circumferential edge part of the wafer 1 to generate temperature variation the same with the central part, and when the wafer comes in contact with the temperature at the inside and the outside of the core tube, the structure is designed such that the circumferential edge of the wafer 1 only is inhibited to follow sensitively the temperature thereof. A poly-silicon film is formed on the surface of the wafer 1 according to the low pressure CVD method using the heat treatment jig 8 like this, and the respective wafers are porduced with unified film thickness, film quality at the respective parts of the wafer. |
