| 摘要 |
PURPOSE:To remarkably improve the non-defective rate of each manufacturing process by a method wherein a substrate of an arbitrary thickness is enabled to use by separating a semiconductor substrate individually before etching and isolating a P-N junction. CONSTITUTION:Electrodes 22 and 23 are provided on both surfaces of the semiconductor substrate 21 having a P-N junction, which is adhered on a quartz plate 24 with wax 25 with the junction outside. Separated individually by means of a diamond cutter, the substrate 21 is etched resulting in adjustment of the P-N junction to a required area and shape. Finally, the substrate is individualized by being removed from the quartz substrate 24. This constitution enables to arbitrarily select the thickness of the semiconductor substrate and reduce the rate of defectives generated at the time of handling; the scribing surface of the P-N junction is removed by later etching, and therefore crystal defects do not generate. |
