| 摘要 |
PURPOSE:To control the thickness of a single crystal silicon island easily, and to improve the quality of the single crystal silicon island by utilizing the difference of etching rates due to the difference of impurity concentration without depositing polycrystalline silicon. CONSTITUTION:A high-concentration impurity layer 4 containing boron is formed to the surface of a single crystal silicon substrate 1 through diffusion treatment, etc. A single crystal silicon film 5 having low impurity concentration is grown in an epitaxial manner in predetermined thickness through a CVD method, and the film 5 is wet-etched to form the single crystal silicon islands. A silicon dioxide film 2 is formed onto the substrate to which the islands are formed, the film 2 is coated with an adhesive layer 6, and the surfaces of the adhesive layer 6 and a support substrate 7 are fast stuck and bonded through heat treatment. The substrate 1 and the impurity layer 4 are removed through polishing and etching, and the substrate with the single crystal islands, crystallinity thereof is excellent and which are insulated mutually, is manufactured. |
