| 摘要 |
PURPOSE:To improve the accuracy of superposition of the patterns of each layer by compensating the quantity of displacement of the positions of mark detection formed in the case when a standard mark prepared by gold, etc. and a silicon stepped-difference mark prepared on a sample surface are detected. CONSTITUTION:In an LSI manufacturing process, patterns are drawn on a wafer substrate 60 under the state in which a chip mark has the same constitution as the silicon stepped-difference mark 62. The mark 62 prepared on the substrate 60 is moved just under a beam optical axis. The value of a laser measuring instrument in case of the coincidence of the beam optical axis and the mark 62 is obtained from a result of the detection of the position of the mark 62 at that time and the value of the laser measuring instrument of an XY stage. The standard mark 61 prepared by gold, etc. is moved to each lattice point, and the position of the mark 62 is detected. When the displacement of the positions of detection is generated, the quantity of displacement is compensated by using a predetermined formula. Accordingly, the accuracy of superposition of the patterns of each layer can be improved. |
