发明名称 AMORPHOUS SILICON SOLAR BATTERY
摘要 PURPOSE:To improve the conversion efficiency of the titled solar battery by a method wherein, in the composition of the transparent conductive film of In2O3+SnO2, SnO2 is increased as going away from the substrate, and an SnO2 film is formed on the side which comes in contact with an amorphous silicon P- I-N structure. CONSTITUTION:The grain-like material mixed at the rate of In2O3: SnO2=95:5 is put in a crucible to be used for electron beam, a transparent conductive film 2 is formed on a glass substrate 1 by performing a vapor-deposition, and an SnO2 film is formed by vapor-depositing SnO2 grains. After an a-Si film (or an a-SiO film) 4 containing boron, an a-Si film (I layer) 5 and an a-Si film N layer) 6 containing phosphorus have been formed using CVD method, an Al electrode 6 is formed. According to this constitution, the voltage and current characteristics of the titled solar battery can be improved when compared with an In2O+SnO2 transparent conductive film and an SnO2 transparent conductive film.
申请公布号 JPS5916387(A) 申请公布日期 1984.01.27
申请号 JP19820125379 申请日期 1982.07.19
申请人 NIPPON DENSO KK 发明人 TAKEUCHI YUKIHISA;MORI MASAAKI;MAEKAWA KENJI;NISHIZAWA TOSHIAKI
分类号 H01L31/04;H01L31/075;H01L31/18 主分类号 H01L31/04
代理机构 代理人
主权项
地址