| 摘要 |
PURPOSE:To enable to easily detect the film thickness of a protection film and the unevenness on the surface and heat a substrate by a method wherein a solar battery is formed on the same semiconductor substerate together with a semiconductor integrated circuit. CONSTITUTION:SiO2 films 12 are formed on the surface of the P type Si substrate 11. An SiO2 film 13 for a gate is formed, and then a poly Si film 14 for a gate electrode is formed. A source region and a drain region 16 of a MOS transistor are formed by ion-implanting As atoms. An N type region 17 for forming the solar battery and an N type region 18 for forming a light emitting element are formed by ion-implanting the As atoms. After forming a phospho silicate glass film 19, windows are opened at fixed positions, and then Al wiring films 20 are formed on the substrate 20. |
