THIN FILM DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To make it possible to perform patterning on an oxide semiconductor layer or a source/drain electrode by wet etching, especially, when an electroluminescence element and a TFT element for driving the electroluminescence element are integrally formed.SOLUTION: In a manufacturing method of a thin film device, an electroluminescence element 10 is formed by laminating a plurality of layers including an oxide-containing electron injection layer 3 and a luminescent layer 5 between a cathode and an anode, and a TFT element is formed by laminating a plurality of layers including an oxide semiconductor layer 14 by wet etching. When each layer of the electroluminescence element 10 and the TFT element 20 is formed by lamination, an etching rate of the electron injection layer 3 to an etchant used in the wet etching of the oxide semiconductor layer 14 becomes equal to or less than 1/5 of an etching rate of the oxide semiconductor layer 14 to the etchant.SELECTED DRAWING: Figure 1