| 摘要 |
PURPOSE:To enable removal of remaining Cr without requiring overetching at the time of development by raising nitride degree of a CR layer near a substrate in a photomask blank prepared by forming the Cr layer contg. N on the transparent substrate. CONSTITUTION:The photomask is obtained by laminating an N-contg. Cr layer 22 comparatively high in nitride degree and an N-contg. Cr layer 23 comparatively low in nitride degree on a tansparent substrate 10 made of soda lime glass finely polished on the surface. Further, a Cr oxide layer 32 contg. N may be laminated on said Cr layer 23. |
