| 摘要 |
PURPOSE:To reduce a horizontal radiation angle and decrease threshold current by a method wherein the width of a mesa stripe is reduced in the neighborhood of an output side cleavage plane, and the width of an active layer is made smaller than that of the mesa stripe. CONSTITUTION:The first buffer layer 2, the active layer 3, and the second buffer layer 4 are successively grown on a substrate 1. Next, two grooves are formed by etching, thus producing the narrower mesa stripe 20 and the wider mesa stripe 30. Then, the active layers 3 in the stripes 20 and 30 are included by the layers 2 and 4, after making only the active layers 3 in the stripes 20 and 30 smaller than the widths of the stripes 20 and 30 by etching. Thereafter, the first block layer 5, the second block layer 6, a buried layer 7, and a cap layer 8 are grown, and later cleavage is formed at positions of the stripes 20 and 30. |
