| 摘要 |
PURPOSE:To contrive reliability of the titled semiconductor device by a method wherein a metal thin film is provided between a polycrystalline semiconductor for fusing and a semiconductor substrate. CONSTITUTION:A silicon dioxide 2 is provided on a silicon substrate 1, a metal thin film 4 such as aluminum, tungsten and the like is provided thereon, a silicon dioxide 5 is coated on the metal thin film, a polycrystalline silicon wiring layer 3 is provided thereon, and a programable element is formed. When a laser beam is irradiated for the purpose of fusing the wiring 3, no silicon substrate is damaged because the non-absorbed laser beam is reflected by the polycrystalline silicon, thereby enabling to prevent the generation of a short-circuit due to the scattering of silicon. |
