| 摘要 |
PURPOSE:To form a magnetic bubble element without transfer margin by increasing the curvature of an ion implantation transfer path at a connecting part to move bubbles from the 1st transfer path to the 2nd transfer path more than the curvature of the ion implantation transfer path at the connection part to transfer the bubbles from the 2nd transfer path to the 1st transfer path. CONSTITUTION:In measuring a transfer margin at the connecting part while changing the curvature r1 of the ion implantation transfer path 6 of the connection part, the dependancy on radius of curvature as shown in Figure is obtained. The X axis in Figure indicates the r1 divided by the curvature r2 of the ion implantation transfer path of the connection part from a permalloy transfer path to the ion implantation transfer path. The transfer margin of the connection part from the ion implantation transfer path to the permalloy transfer path is increased as the r1/r2 is decreased as shown in Figure and windened suddenly when the value of the r1/r2 is at 0.8. Thus, the radius of curvature r1 of the connection part from the ion implantation path to the permalloy transfer path is selected as <=0.8 times of the radius of curvature r2 of the connection part from the permalloy transfer path to the ion implantation transfer path (the curvature is >=1.25 times). |
