| 摘要 |
PURPOSE:To attain excellent recrystallization and obtain a high performance three- dimensional IC by setting the scanning direction in the irradiation of laser beam to <111>, <112> or <113> through the use of single crystal semiconductor having the surface orientation of (110) or that similar to it as the base substrate. CONSTITUTION:A base oxide film 2 is formed selectively to the surface of single crystal silicon substrate 1 having the surface orientation of (110) where a semiconductor element is formed, an aperture 11 is provided, thereby the substrate surface is exposed. A polycrystal silicon film 3 is formed on the entire part. The polycrystal silicon film 3 is perfectly isolated and insulated surrounding it with the SiO2 21 and thereby the rectangular polycrystal silicon island 5 is formed, where the longer axis direction is parallel to the orientation <111> of the base substrate. Next, this semiconductor substrate is placed, for example, on the vacuum-absorbing stage and is then heated. During this period, it is irradiated with the CW-Ar laser beam. As indicated by the arrow mark (x), scanning is carried out almost in parallel to the longer axis direction of polycrystalline silicon island 5. The polycrystalline silicon island 5 is recrystallized by irradiation of laser, the crystal 51 of surface (110) is formed at the entire part of island along the direction of arrow Y with the substrate surface of aperture 11 used as the seed and the single crystal silicon island 51 is formed. |
