| 摘要 |
PURPOSE:To realize a high sensitivity small sensor, by well combining an ISFET manufacturing process and a sensor manufacturing process in one process while using ISFET as the sensor. CONSTITUTION:In manufacturing a semiconductor sensor, an ISFET chip 1 is at first fabricated. That is, a source diffusing region 5 and a drain diffusing region 7 are respectively formed on a silicon substrate 3 as N<+> diffusion layers and a gate part 9 is formed therebetween. In the next step, the entire surface thereof is covered with an insulating layer (e.g., an SiO2-layer) except the gate part 9 and a part of both regions 5, 7 on the surface of the ISFET chip 1. By well combining the ISFET manufacturing process and the sensor manufacturing process in one process according to the above-mentioned inventive process, ISFET can be actually mounted as a sensor and a high sensitivity small sensor can be realized. |
