发明名称 MATERIAL FOR SEMICONDUCTOR SUBSTRATE
摘要 <p>PURPOSE:To obtain a material, thermal expansion property, thermal conduction and the density of an alloy thereof are improved, by impregnating a sintered porous body, which is acquired by pressing and molding W powder or Mo powder or W-Mo alloy powder of specific grain size and sintering it in a nonoxidizing atmosphere at a specific temperature, with Cu at a specific weight ratio. CONSTITUTION:A sintered porous body, which is obtained by pressing and molding W powder, Mo powder or W-Mo alloy powder of 1-40mum mean grain size and sintering it in a nonoxidizing atmosphere at 1,300-1,600 deg.C, is impregnated with Cu at a 5-25% weight ratio. When fine powder of 1mum or less are used as raw-material powder, independent holes are easy to be generated partially on a sintering, Cu is not impregnated, and thermal conductivity lowers. When coarse grains of 40mum or more are used, grains are roughened by the growth of grains on a baking, and variance in an alloy of thermal conductivity is enlarged. A remarkable effect is not displayed both in thermal expansion and thermal conduction when the content of Cu falls bellow 5%, and a thermal expansion coefficient increases and the material is undesirable when the content exceeds 25%.</p>
申请公布号 JPS59141247(A) 申请公布日期 1984.08.13
申请号 JP19830015121 申请日期 1983.01.31
申请人 SUMITOMO DENKI KOGYO KK 发明人 OSADA MITSUO;HASE SOUGO;OOTSUKA AKIRA
分类号 H01L21/52;H01L21/58;H01L23/13;H01L23/14;H01L29/12 主分类号 H01L21/52
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