| 摘要 |
PURPOSE:To provide a method of forming island-shape single crystal silicon patterns by self-alignment in grooves formed in an insulation film. CONSTITUTION:A resist mask film 13 is formed on an SiO2 insulation film 12 and a plurality of grooves 14, whose depth is, for instance, about 0.6-0.7mum and whose side surfaces are approximately perpendicular to the main surface of the substrate, are formed by an anisotropic etching means. Ions of argon, oxygen, silicon and the like are selectively implanted against the bottom surfaces of the grooves 14 to form damaged layers 15 selectively on the bottom surfaces of the grooves 14 and the bottom surfaces of the grooves 14 are activated. After the resist mask film 13 is removed, Si layers are let grow on the substrate surface by the technology by which selective epitaxial growth of Si on single crystal Si and SiO2 is made using normally used depressurizing system. Then polycrystalline Si layers 16 are turned into single crystal Si layers 17 by melting and recrystallization using a conventional laser annealing technology by, for instance, a continuous wave argon laser. Semiconductor elements such as MOS transistors are formed on the island-shaped single crystal Si patterns thus formed and insulation films, wirings and the like are formed and a semiconductor IC or S-O-I composition is completed. |
