| 摘要 |
PURPOSE:To obtain the titled device having good characteristics of a small series resistance and therefore less heat generation by using a (AlXGa1-X)0.5In0.5P series mixed crystal as a P type photo confined layer. CONSTITUTION:This semiconductor laser has a laminated structure wherein an active layer 4 whose band gap energy is smaller than that at the point GAMMA of the (AlXGa1-X)0.5In0.5P and which is composed of a compound semiconductor with good GaAs lattice matching is sandwiched between a clad layer 3 made of N type ZnSe or ZnSe1-YSY and a carrier confined layer 5 made of P type ZnSe or ZnSe1-YSY 100Angstrom or more thick. Further, the laser is of a construction equipped with the photo confined layer 6 made of P type (AlXGa1-X)0.5In0.5P in contact with the P type carrier confined layer. Otherwise, as a constitution of reduced series resistance, a carrier confined layer 11 made of N type ZnSe or ZnSe1-YSY 100Angstrom or more thick is provided instead of the above-mentioned N type clad layer 3, and further this layer 11 is provided with a photo confined layer 10 made of N type (AlXGa1-X)0.5In0.5P. |
