| 摘要 |
PURPOSE:To enable to obtain the withstand voltage of a bi-polar transistor to some degree without the inferiority of the characteristic of a J-FET to that of a discrete J-FET, by forming two epitaxial layers of different conductivity types on a substrate, and then forming the J-FET and bi-polar transistor on said layers. CONSTITUTION:A gate region 45, a drain region 52, a source region 53 and the J-FET having electrodes 55 for these regions are formed at the parts isolated by a P-epitaxial layer 44 and a P<+> one 47. Besides, a base region 49, an emitter region 50, a collector contact region 51 and the bi-polar transistor having electrodes for these regions are formed in the island region having an N-well region 45. |
