| 摘要 |
PURPOSE:To effectively perform a turn OFF operation by flowing the OFF gate current of a main GTO in the base directly under the emitter of an amplifying gate. CONSTITUTION:In an amplifying gate structure GTO thyristor, an N type emitter layer N3 is diffused in a P type base layer PB of a main GTO, the electrode G3 of the layer N3 and the electrode G4 of the layer PB of an amplifying gate AG are connected, and a gate P<+>B2 is formed as a strip layer in the layer PB opposed to the layer N3. Thus, the OFF gate current is flowed in a circuit of an emitter NE2 a gate G3 a gate G4 a buried gate P<+>B1 a gate G1 at the turn OFF time, and led from the gate G1 through the part directly under the N type emitter NE1 of the amplifying gate, thereby effectively turning OFF it. |
