| 摘要 |
PURPOSE:To protect an MES.FET from an overvoltage input by connecting a Schottky diode and a resistor to a gate of the input first stage. CONSTITUTION:The resistor 7 is connected to the gate of the driving MES.FET 1 of the input first stage connected to a load MES.FET in an IC having MES. FETs having metal-semiconductor structure of the gate electrode. Further, Schottky diodes 5, 6 are connected between an input terminal 3 and ground GND. Then, even if an excessive voltage is inputted to the input terminal 3 because of a surge pulse, a voltage larger than the Schottky barrier voltage is not produced to the gate of the driving MES.FET1. Thus, since no gate current flows to the MES.FET, the gate electrode is prevented from fusion. |
