METHODS OF FORMING CONTACTS FOR A SEMICONDUCTOR DEVICE STRUCTURE, RELATED METHODS OF FORMING A SEMICONDUCTOR STRUCTURE, AND RELATED SEMICONDUCTOR STRUCTURES

摘要

A method of forming contacts for a semiconductor device structure comprises forming contact holes extending into neighboring semiconductive pillars and into a nitride material of nitride-capped electrodes. Composite structures are formed within the contact holes and comprise oxide structures over sidewalls of the contact holes and nitride structures over the oxide structures. Conductive structures are formed over inner sidewalls of the composite structures. Additional nitride-capped electrodes are formed over the conductive structures and extend perpendicular to the nitride-capped electrodes. Pairs of nitride spacers are formed over opposing sidewalls of the additional nitride-capped electrodes and are separated from neighboring pairs of nitride spacers by apertures extending to upper surfaces of a portion of the neighboring semiconductive pillars. Portions of the oxide structures are removed to expose sidewalls of the portion of the neighboring semiconductive pillars. Semiconductor device structures and additional methods are also described.

主权项

1. A method of forming contacts for a semiconductor device structure, comprising:
forming contact holes extending into neighboring semiconductive pillars and into a nitride material of nitride-capped electrodes; forming composite structures within the contact holes, the composite structures partially filling the contact holes and comprising oxide structures over sidewalls of the contact holes and nitride structures over the oxide structures; forming conductive structures over inner sidewalls of the composite structures, the conductive structures filling remaining portions of the contact holes and confined within boundaries of the contact holes; forming additional nitride-capped electrodes over the conductive structures, the additional nitride-capped electrodes extending perpendicular to the nitride-capped electrodes; forming pairs of nitride spacers over opposing sidewalls of the additional nitride-capped electrodes, neighboring pairs of nitride spacers separated by apertures extending to upper surfaces of a portion of the neighboring semiconductive pillars; and removing portions of the oxide structures to expose sidewalls of the portion of the neighboring semiconductive pillars.