发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes a first fuse set block including a fuse array for storing first repair information, and a control block configured to store second repair information in a first mode, and generate an output control signal when input addresses applied from an external source and the second repair information are the same, in a second mode, wherein the first fuse set block enables a first match signal for accessing a first redundancy memory cell when the stored first repair information and the input addresses are the same, and disables the first match signal in response to the output control signal. |
申请公布号 |
US2016300627(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201514855071 |
申请日期 |
2015.09.15 |
申请人 |
SK hynix Inc. |
发明人 |
YOU Jung-Taek;CHOI Byeong-Chan |
分类号 |
G11C29/00;G11C17/16;G11C8/18;G11C5/14;G11C8/06;G11C8/12 |
主分类号 |
G11C29/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor memory device comprising:
a first fuse set block including a fuse array for storing first repair information; and a control block suitable for storing second repair information in a first mode, and generating an output control signal when input addresses applied from an external source and the second repair information are the same, in a second mode, wherein the first fuse set block enables a first match signal for accessing a first redundancy memory cell when the stored first repair information and the input addresses are the same, and disables the first match signal in response to the output control signal. |
地址 |
Gyeonggi-do KR |