| 摘要 |
<p>PURPOSE:To obtain a memory cell, which resists radiation and which can be nondestructive-read out, by storing or extracting positive or negative charges to or from a floating gate on a writing and mounting a control element for electrically detaching the floating gate from others on a reading. CONSTITUTION:A reading word line 45 is grouned and fixed voltage is applied to a writing word line 44 on a writing. The potential of a bit line 43 is transmitted over a floating gate 46 as it is under the state, and the informations of ''0'' and ''1'' are each written by grounding the potential of the bit line or bringing it to high one. The writing word line 44 is grouned and fixed voltage is applied to the reading word line 45 on a reading. The potential of the bit line 43 changes in response to ''0'' and ''1'' of memorized informations because a memory transistor 42 is turned OFF when charges are not stored in the floating gate 46 and the memory transistor 42 is turned ON when charges are stored at that time.</p> |
