| 摘要 |
PURPOSE:To form two kinds of kinds of transistor in symmetry by a method wherein a source region is formed in a P-layer formed to isolate an N-layer, and a drain region in the isolated N-layer, respectively. CONSTITUTION:N-layers 11 and 12 are formed on a P type substrate 10. The layers 11 and 12 are formed by the diffused formation of a P-player 13 after N- layer formation, and then by the two-division of the N-layer because this P-layer formation is isolation diffusion. N-layers (drain regions) 14 and 15 of high concentration are formed in the layers 11 and 12, and electrodes 16 and 17 are built thereon. P-layers 18 and 19 serving as the channel forming section are formed on the layer 13, besides two N-layers 20 serving as the source regions being formed, and an electrode 21 being then formed so as to connect the layers 20 and 13. |
