| 摘要 |
PURPOSE:To enhance adhesion between an SiC layer and an alpha-Si layer by forming the alpha-Si layer through high frequency discharge in a gaseous mixture contg. SiF4 on the SiC layer formed on a metal face. CONSTITUTION:A metal, such as an aluminum cylinder, is used as a substrate 101, and a 13-17mum thick SiC film 102 is formed on the substrate 101 by using a plasma CVD device, keeping the substrate 101 at a temp. of 170-200 deg.C, allowing B2H6 diluted with SiH4, CH4 and H2 to flow there, and discharging through the gaseous mixture with high frequency waves. Then, an about 5mum thick alpha-Si film 103 is formed on the film 102 by changing over the compsn. of the gaseous mixture to B2H6 diluted with SiH4, SiF4, and further H2, and executing high frequency discharge. Said film formation is sped up by mixing a small amt. of argon. As the gas for forming said SiC film, a gaseous mixture of monosilane and methane, and at least two of diborane, phosphine, H2, and argon is used, and as the gas for forming the alpha-Si film, a gaseous mixture of SiF4 and at least one of said enumerated gases is used. |
