| 摘要 |
PURPOSE:To obtain a photoconductive member having superior sensitivity and durability by forming the 1st amorphous layer consisting of the 1st layered region contg. Si and Ge so that Ge is ununiformly distributed in the thickness direction and the 2nd layered region made of a photoconductive Si layer not contg. Ge and the 2nd amorphous layer contg. Si and N. CONSTITUTION:An amorphous layered region 103 contg. Si and Ge as principal components and an amorphous layered region 104 made of amorphous Si not contg. Ge, contg. B, Al or the like, and having p type conductivity or amorphous Si not contg. Ge, contg. P, B or the like, and having n type conductivity are successively formed on a support 101 such as an electrically conductive support or an insulator having an electrically conductive film on the surface to form the 1st photoconductive amorphous layer 102. Ge in the region 103 is continuously distributed in the thickness direction so that the concn. of Ge is made higher on the support 101 side. The 2nd amorphous layer 105 contg. Si and N is then formed on the layer 104 to obtain a photoconductive member 100 having high sensitivity in the whole visible light region and high resolution. Semiconductor laser is especially well applicable to the member, and a high quality image is obtd. |
