| 摘要 |
PURPOSE:To obtain a photoconductive member having high photosensitivity and high durability by forming the 1st amorphous layer consisting of the 1st layered region contg. Si and Ge as principal components and the 2nd layered region not contg. Ge, contg. Si and showing photoconductivity and the 2nd amorphous layer contg. Si and N on a support for a photoconductive member. CONSTITUTION:A two-layered photoconductive layer 102 consisting of the 1st layered region 103 made of amorphous Si contg. Ge and the 2nd layered region 104 made of amorphous Si not contg. Ge is formed on a support 101 such as an Al plate or an insulating substrate having an electrically conductive Al film on the surface. An amorphous layer 105 contg. Si and N is then formed on the region 104. It is preferable that a proper amount of H or halogen such as F or Cl is incorporated into each of the layers so as to improve the electric conductivity. A photoconductive member having high resolution and high photosensitivity in the wide range of visible light to light of a longer wavelength is obtd. Semiconductor laser light is especially well applicable to the member, and a high density image having clear halftone is obtd. |
