SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE:To improve the amount of surge resistance by a method wherein guard rings are separately formed with respect to each of the main junction part and the contact part. CONSTITUTION:An SiO2 layer 2 is formed on the surface of an N-conductivity type semiconductor substrate 1 composed of Si doped with an N type impurity. The layer 2 is formed into inside and outside guard ring patterns through the first photo resist process. Next, the inside guard ring 3 and the outside guard ring 4 are formed at the same time by introduction of boron in the substrate 1 through the boring parts of the guard ring pattern and then by thermal diffusion. Thereafter, the main junction part 5 made of a diffused layer is formed so that the end of the part 5 may be positioned in the outside guard ring 4, after passage through the process of photo resist for removal of SiO2 layer formed during guard ring formation and the process of boron implantation and diffusion. Then, the contact hole is formed on the inside guard ring 3 through the process of photo resist for removal of the SiO2 layer formed during junction formation.