| 摘要 |
PURPOSE:To provide the effective protection against an over-voltage impressed from outside by a method wherein a protection resistor of high withstand voltage is applied in a specific structure between an input terminal connected to the external circuit and an internal integrated circuit. CONSTITUTION:A protection resistance element is connected between the semiconductor internal integrated circuit and the external input terminal. This resistance element is manufactured at the same time with other transistors and resistance elements by the use of a normal IC technique, and each resistance element is independent and put in a structure of insulated isolation. For example, a P type resistance region 9 is provided in an N type isolated region 8 formed in a P type substrate 7, and terminal 11 and 12 are connected to the surface thereof. Isolated from these regions 8 and 9, the required integrated circuit is formed in the semiconductor substrate 7 by the use of a normal IC technique; one resistor terminal 12 is connected to the input of its multi-power source circuit, and the other resistor terminal 11 to the external input terminal. Further, the N type isolated region 8 including only one protection resistance element 9 is used by short-circuiting with the input terminal 11 of the protection resistance element. |
