| 摘要 |
PURPOSE:To prevent an excessive etching of an applied film from deteriorating the shape with a level difference, by a method in which a first insulation film is perforated, applied with a solution and calcined to form a second insulation film, and the second film in the perforation is selectively removed. CONSTITUTION:An oxide film 25 is formed by means of vapor growth, and perforated beside the polysilicon electrode 23 to provide a contact hole 26. The substrate is rotationally applied with a solution of a compound containing silicon as its main element, and is calcined to form a film 27, which is then uniformly removed by etching. The film 27 applied within the contact hole is removed, using a photoresist. The photoresist 28 in the contact section is selectively developed and removed so that the photoresist 28 covers the side wall 26a of the contact hole 26 where a level difference exists. When the film 27 is removed by etching, the film 27 formed on the side wall 26a also can be removed. Since the film 25 has a lower etching rate than the film 27, the film 27b in the recess defined by the level difference is not removed by etching. Therefore, the effect of smoothing the level difference can be maintained. |
