| 摘要 |
PURPOSE:To obtain a tri-state type drive circuit with high speed and small chip area by using mainly MOSFETs and combining bipolar transistors (TRs) to them. CONSTITUTION:NOR circuits 5, 6 inputting an enable signal (INE)CS selecting one of plural IC chips and a signal 1 from a chip are provided, and since N- MOSFETs 52, 62 are turned on when the INESC is at high level, a TR8 and an N-MOSFET9 are turned off and an output terminal 2 is in the floating state. Since the INECS is at L level, since P-MOSFETs 51, 61 are turned on, any of the N-MOSFET9 and the TR8 is turned on in response to the level H/L of the signal 1 and the output terminal goes to L/H. |
