发明名称 PIEZOELECTRIC THIN FILM RESONATOR
摘要 PURPOSE:To improve the mechanical property of a vibrating part and also the environmental resistance by processing the middle part of a silicon substrate at least at one face of which silicon nitride group thin film is laminated to be formed thin and covering it with silicon oxide. CONSTITUTION:Silicon nitride is laminated on both sides of a silicon substrate 10, and a part of one side is processed by etching in a rectangular form. A vibrator 18 having a recessed part at the middle part is formed by applying the anisotropic etching from the rectangular window 12. Since the nitride thin film 11 is stable chemically and thermally and has an excellent mechanical property, miniaturization is attained. The temperature of the 1st electrode 14 and the 2nd electrode 16 impressing a voltage to a piezoelectric substance 15 is compensated by coating a silicon oxide 17 to the piezoelectric substance 15 and also the piezoelectric substance 15 is protected from environment.
申请公布号 JPS6068711(A) 申请公布日期 1985.04.19
申请号 JP19830176269 申请日期 1983.09.26
申请人 TOSHIBA KK 发明人 SUZUKI HITOSHI
分类号 H03H9/17;H03H3/02 主分类号 H03H9/17
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