| 摘要 |
PURPOSE:To accelerate the operation of a semiconductor device with a silicide layer by connecting a metal silicide layer formed on a polycrystalline silicon of lower layer with two polycrystalline silicon layers, thereby enabling to reduce the contacting area between two polycrystalline silicon layers. CONSTITUTION:A high melting point metal layer is formed on the first polycrystalline silicon layer 3, a molybdenum silicide layer 8 is formed by exposing, for example, in nitrogen atmosphere of high temperature to remove the prescribed portion such as by a lithographic technique. Then, the second polycrystalline silicon layer 5 is formed, and the prescribed portion is allowed to remain. According to this method, even if the layers 3, 5 are in reverse conductive types, no P-N junction is formed due to the presence of an intermediate silicide layer 8. Thus, the layers 3, 5 coupled by a wiring material becomes an overlapped portion only, thereby eliminating a space for contacting and increasing the degree of freedom of wirings. The layer resistance can be reduced by silicifying the layer 3, thereby being effective for acceleration. |
