发明名称 ELECTRODE DEMOUNTING STRUCTURE OF CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE:To facilitate the cleaning of the inside of a vacuum tank, and to prevent the contamination of a chemical vapor-deposited film with a vapor depositing material by constituting the vacuum tank of a chemical vapor deposition apparatus to be separable from the main body of the tank at a flange part. CONSTITUTION:In the vapor deposition of amorphous Si on a substrate with chemical vapor deposition by using gaseous SiH4, a vacuum tank 10 for the chemical vapor deposition is constituted of the main body 11 of the tank and a flange part 12 both of which are joined by a coupling part 13. A plate 21 to be vapor deposited is arranged vertically in the vacuum tank 10. While heating the plate with a heater 22, plasma is discharged in a hollow electrode 14 provided to the flange 12 by impressing a high- frequency voltage with an electric power source 18, and gaseous SiH4 is spouted from a blow-off port 20 of the electrode 14. The SiH4 is thermally decomposed, and amorphous Si is deposited on the surface of the substrate 21 in the form of a film. At this time, fine Si powder is formed, accumulated in the vacuum tank, and drops on the Si deposited film to contaminate the film. To prevent the contamination, the vacuum tank 10 is separated at the coupling part 13 after every reaction, and the inside is cleaned to form the good-quality amorphous Si film.
申请公布号 JPS6075580(A) 申请公布日期 1985.04.27
申请号 JP19830182996 申请日期 1983.10.03
申请人 NIPPON SHINKU GIJUTSU KK 发明人 MINAMI JIROU
分类号 C23C16/50;C23C16/44;C23C16/509;(IPC1-7):C23C16/50 主分类号 C23C16/50
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