| 摘要 |
PURPOSE:To activate the source.drain formation of n channel MOSFET without lowering the threshold value of the other region by a method wherein the irradiating regions of energy beams are limited to the range of ion implanted semiconductor regions. CONSTITUTION:Reflecting masks 10 are respectively formed on oxide films 7 before laser beam irradiation so that irradiating regions 8A may be limited to the range of transistors (Tr) 1a to be opened therein. Gates 5 become masks for gate parts 5. The gates 5 are heated up to 300 deg.C together with a substrate 2 to be irradiated entirely by scanning spots of argon ion laser beams 8. The reflecting masks 10 irradiated are removed. Through these procedures, parts 3, 4 are activated to be a source 3b and a drain 4b preventing threshold value voltage lowering layers from being formed under the oxide films 7. |
