| 摘要 |
PURPOSE:To prevent the manufacturing yield from decreasing in an IMPATT diode formed in a mesa structure by coating the surface of a substrate formed when chemical etching is performed from a contact layer side with a metal film. CONSTITUTION:The substrate side of an Si epitaxial wafer on which an N<-> type operation layer 2 and a P<+> type contact layer 3 are sequentially formed on an N<+> type Si is cut by mechanical or chemical etching, and circular electrodes 4, 4' made of multilayer structure of Ti-Pt-Au are formed on both side surfaces. Then, with the electrode 4 of the layer 3 side as a mask a mesa structure is formed at the junction by chemical etching, and a gold film 5 is then deposited on the mesa side. This gold film is formed on the electrode 4 and the substrate 1, but becomes a shade at the P-N junction in which the electrode 4 is projected from the mesa, and the gold film is not formed on the portion. After the gold film 5 is then cut, with the electrode 4' from the substrate 1 side as a mask the substrate is cut by chemical etching to obtain a pellet. |
