| 摘要 |
PURPOSE:To enable to operate an element at a high speed by forming channels on the upper and lower surfaces of a semiconductor layer for forming source and drain regions of the first conductive type channel MOS transistors, and electrically connecting the gate electrodes of the transistors. CONSTITUTION:The source region 24 leading electrode 38 of a P-channel MOS transistor Tr1 and the source region 31 leading electrodes 383 of an N-channel MOSTRs Tr2, Tr3 are connected to Vout terminal. Further, the drain region 25 leading electrode 382 of the TRs Tr2, Tr3 are connected to a VDD terminal, the drain 32 leading electrode 384 of the TRs Tr2, Tr3 are connected to a VSS terminal, and the gate electrodes 27 of the TRs Tr1-Tr3 and the common gate electrode 25 are connected through contacting holes to a VIN terminal. Conductive channels are formed on the upper and lower surfaces of an Si layer 30, and to connect the gate electrode 27 and the common gate electrode 35 to each other, mutual conductance equivalent to the transistor having twice of the channel width can be provided. |
