THIN-FILM GROWTH DEVICE FOR SEMICONDUCTOR

摘要

PURPOSE:To supply a compound semiconductor substrate with a raw-material mixed gas under the state in which the gas is kept at a low temperature by mounting a gas flow-path regulator into a reaction pipe. CONSTITUTION:A raw material gas fed into a reaction pipe 2 from a gas inflow port 6 for a reaction tower 20 is mixed excellently in a mixing space 26 for a flow-path regulating spacer 21 made of quartz glass, and dispersed and fed toward a compound semiconductor substrate 8 at the central section of a pedestal 10 at a wide angle from an opening 25. A raw material gas current 32 and a rising gas 33 at a high temperature can be separated completely by the spacer 21, and the temperature of a mixed gas until it reaches to the surface of the substrate 8 can be kept at a low temperature. Accordingly, the noxious thermal decomposition reaction of each component gas can be inhibited minimally, and the ratios of each component element related to epitaxial growth can be ensured quantitatively.