| 摘要 |
PURPOSE:To enhance rectification performance of a photosensitive layer and to obtain a photosensitive body enhanceable in electrostatic contrast by freely forming both of photosensitive layers in an amorphous state and in a state advanced in crystallization only through the control of base temp. in the manufacture of an electrophotographic sensitive layer for vapor depositing a photoconductive material on the base. CONSTITUTION:As a photosensitive layer, chiefly P type conductive materials, such as Se or an alloy composed essentially of Se, are used. At the time of vapor deposition, a lower layer 4 is formed by maintaining the temp. of a base in a range for forming a vapor deposition layer advanced in a crystallization state, such as 70 deg.C, to deposit the photoconductive material, and the upper vapor deposition layer 5 is formed by lowering the temp. to a range for forming the deposition layer in an amorphous state, such as 60 deg.C, to deposite the photoconductive material. The presence of the lower layer 4 causes injection of positive holes from the base extremely easily in negatively charging the surface of an insulating layer 3 at the time of primary electrostatic charging, resulting in improving rectification performance of the photosensitive layer. Since positive and negative charges strongly attract each other across the insulating layer 3, and dark decay is not caused, in the next image exposure and simultaneous destaticization stage, a high-contrast electrostatic latent image can be obtained. |
