Semiconductor device with metal silicide layer and fabrication process thereof.

摘要

In a semiconductor device, e.g. two MOSFETS (QA, QB) in a semiconductor substrate 11, a metal silicide layer 19,20 connects the polysilicon gate 14 of one MOSFET (QA) to the drain or source region (17) of the other MOSFET (QB). The metal silicide layer is formed by converting part of a deposited metal layer, eg Mo, to the silicide in/situ. Other devices where the silicide can be used as an interconnection are a single MOSFET, bipolar transistors and resistors or capacitors.