| 摘要 |
The structure overlay a substrate with conductive first pattern (7a) and comprise first layer (3 min ) of an organic polymer, a second layer (9) of an organometallic compound, second conductive pattern (7c sec ) on said layer (9) and metallurgy (7b min ) interconnecting said first and second pattern (7a, 7c sec ) through said layers (3 min , 9). For forming the structure said first, said second, a third and a fourth layer (3 min , 9, 4 min and 5 min ) are deposited with third layer (4 min ) being soluble in a solvent not dissolving layer (3 min ) and fourth layer (5 min ) being oxygen RIE resistant. The layers are selectively removed successively by RIE. Blanket metal layer (7 min ) is applied and then third layer (4 min ) is removed by dissolution and with it the overlying layers. Subsequently the process steps are repeated with the exception of steps involving an organometallic layer. The usage of an organometallic layer provides an improved compatibility of the thermal expansion coefficients between contiguous layers and an oxygen etch stop. |
