| 摘要 |
PURPOSE:To enable the reduction in size of a conductive pattern, and to avoid the possibility of step cut in a conductive film by a method wherein the titled device has a dummy pattern, which is electrically conducted with a semiconductor substrate and is never electrically connected to a plurality of circuit elements, on the semiconductor substrate where a plurality of the circuit elements have been formed. CONSTITUTION:The dummy pattern 8, which is electrically connected to the semiconductor substrate 1 where a plurality of the circuit elements 2, 2', and 2'' have been formed, and which is never electrically connected to the circuit elements, is placed. The size of the dummy pattern 8 is made larger than that of a through hole on the first layer wiring metal 4'. The second layer wiring metal 8' is formed in the upper surface of the dummy pattern 8, and this wiring metal is electrically completely isolated from the other second layer wiring metals 6, 6'. The step cut 7 of the upper layer conductive film generates in the dummy pattern 8'. As a result, step cuts do not generate in the second layer wiring metals 6 and 6' because the through holes on the wiring metals 4 and 4' necessary for the circuit action of the titled device are side-etched in a small amount, and because the etching amount of the metals 4 and 4' is small. |
