发明名称 PLASMA ETCHING DEVICE
摘要 PURPOSE:To increase plasma generation efficiency by arranging a gas excitation device using high-energy beam right before a gas inlet so as to introduce the excited gas into a chamber. CONSTITUTION:A gas, e.g., oxygen gas is introduced into a high-energy beam irradiation chamber 8 through a gas inlet 11. Then the oxigen gas is excited by a high-energy beam e.g., ultraviolet rays projected from a high-energy beam emission source 9 and it becomes an ozone state. And, it is introduced into a plasma chamber through a gas inlet 2 and becomes a plasma state by high frequency between an upper electrode 4 and a lower electrode 5. As the oxygen gas has been in an ozone state at that time, it becomes the plasma state very efficiently.
申请公布号 JPS60153127(A) 申请公布日期 1985.08.12
申请号 JP19840008414 申请日期 1984.01.23
申请人 OKI DENKI KOGYO KK 发明人 OGURA KEN
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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