| 摘要 |
PURPOSE:To obtain highly repeatable continuous discharge by keeping injection gas pressure in plasma X rays source of gas injection discharge system lower than the atmospheric, and by decreasing the generation of charged particles and making a structure with less electrode consumption. CONSTITUTION:By emitting the gas in a gas holder 39 with piston 40 of a high speed open/close gas valve 7 and by forming gas mass 43 between electrodes 17 and 18 through the slot 42 of electrode 17, a plasma X rays source is formed so as to take out X rays 26, which is generated by pinching the plasma 44 produced by discharge between electrodes 17 and 18, from the hole 47 of a plasma reflection plate 46. Then, by regulating the gas in a container 9 with a pressure control device 11 and supplying the gas from a gas buffer container 5 to the high speed open/close valve 7 at low pressure of 200-300Torr, and by taking out the X rays 26 from a bring-out window 28, and the pattern copy is applied to the semiconductor wafer 30. Therefore, device can reduce the generation of the charged particles, and also can decrease the electrode consumption, and can make it possible to use continuously. |
