发明名称 Self repair device and method thereof
摘要 A self repair device may include: an electrical fuse array configured to store bit information of a failed address in a fuse; an electrical fuse controller configured to store a row address or column address corresponding to a failed bit when a failure occurs, generate a repair address by comparing a failed address inputted during a test to the address stored therein, output a rupture enable signal for controlling a rupture operation of the electrical fuse array, and output row fuse set data or column fuse set data in response to the failed address; and a row/column redundancy unit configured to perform a row redundancy or column redundancy operation in response to the row fuse set data or the column fuse set data applied from the electrical fuse array.
申请公布号 US9508456(B1) 申请公布日期 2016.11.29
申请号 US201514878081 申请日期 2015.10.08
申请人 SK HYNIX INC. 发明人 Shim Young Bo
分类号 G11C17/00;G11C29/00;G11C17/16;G11C17/18 主分类号 G11C17/00
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A self repair device comprising: an electrical fuse array configured to store information of a failed address in a fuse; an electrical fuse controller configured to store a row address or column address corresponding to a failed bit when a failure occurs, generate a repair address by comparing a failed address inputted during a test to the address stored therein, output a rupture enable signal for controlling a rupture operation of the electrical fuse array, and output row fuse set data or column fuse set data in response to the failed address; and a row/column redundancy unit configured to perform a row redundancy or column redundancy operation in response to the row fuse set data or the column fuse set data applied from the electrical fuse array; wherein the electrical fuse controller is configured to control the rupture operation when the failed address is a multi-bit address in response to a multi-bit enable signal.
地址 Icheon-Si KR