发明名称 |
NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS |
摘要 |
PROBLEM TO BE SOLVED: To provide a negative resist composition excellent in the resolution and the LER in electron beam lithography techniques.SOLUTION: The negative resist composition comprises (A) a polymer comprising recurring units of general formula (1) and acid-generating recurring units and (B) a carboxylate.SELECTED DRAWING: None |
申请公布号 |
JP2016200651(A) |
申请公布日期 |
2016.12.01 |
申请号 |
JP20150078904 |
申请日期 |
2015.04.08 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
DOMON DAISUKE;MASUNAGA KEIICHI;WATANABE SATOSHI |
分类号 |
G03F7/038;C08F220/30;G03F7/004 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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