发明名称 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a negative resist composition excellent in the resolution and the LER in electron beam lithography techniques.SOLUTION: The negative resist composition comprises (A) a polymer comprising recurring units of general formula (1) and acid-generating recurring units and (B) a carboxylate.SELECTED DRAWING: None
申请公布号 JP2016200651(A) 申请公布日期 2016.12.01
申请号 JP20150078904 申请日期 2015.04.08
申请人 SHIN ETSU CHEM CO LTD 发明人 DOMON DAISUKE;MASUNAGA KEIICHI;WATANABE SATOSHI
分类号 G03F7/038;C08F220/30;G03F7/004 主分类号 G03F7/038
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