HETEROJUNCTION FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a heterojunction field effect transistor and a manufacturing method of the same, which can inhibit a decrease in a drain current in a fast operation.SOLUTION: A heterojunction field effect transistor according to the present embodiment is a heterojunction field effect transistor composed of a nitride semiconductor comprises: a p-type doping layer 2 which is formed on a semi-insulating substrate 1 and doped with a p-type dopant; a channel layer 3 formed on the p-type doping layer 2; and a barrier layer 4 formed on the channel layer 3. A sum of a p-type dopant concentration per unit area in the p-type doping layer 2 and a trap level concentration per unit area formed by dislocation occurring in a depth direction of the p-type doping layer 2, the channel layer 3 and the barrier layer 4 is equal to or less than 8.4×10cm.SELECTED DRAWING: Figure 1