| 摘要 |
PURPOSE:To detect a pressure with higher accuracy by eliminating effects of surrounding temp by providing gauge resistors on a pressure-receiving diaphragm and on each substrate of monocrystalline semiconductor for a pressure sensor utilizing the piezo resistance effect of a semiconductor. CONSTITUTION:When anisotropic etching on a thinner part of a substrate 10 of a monocrystalline semiconductor of silicon, etc. a pressure-receiving diaphragm 11 is formed. The substrate 10 is fixed on a base 30 of glass, silicon, etc. and a recessed part 40 under the diaphragm 11 is evacuated to vacuum. Gauge resistors 21, 22 are provided on the diaphragm 11 in their longitudinal directions to intersect at right angles, and a gaue resistor 23 is also provided on a thicker part of the substrate 10. In case of measuring pressure with this pressure sensor, a stress due to the measuring pressure and the vacuum of the recessed part 40 is exerted on the diaphragm 11, and no stress is exerted on the thicker part 12, but the temp. dependability on the gauge resistance is equal. Consequently the pressure is detected with higher accuracy by correcting the gauge resistance of the diaphragm with the gauge resistance of the thicker part. |
