DOUBLE-CHANNEL PLANAR HETEROSTRUCTURE SEMICONDUCTOR LASER

摘要

A double-channel planar buried-heterostructure laser diode (DC-PBH LD) differs from the prior art structure by the provision of a third blocking layer which is disposed between the two conventional blocking layers. The third layer has a smaller carrier concentration than that of each of the other two layers. The third blocking layer serves to reduce the junction capacity of the device which results in a greatly improved high frequency response.