| 摘要 |
PURPOSE:To reduce gate resistance, and to increase gate withstanding voltage simultaneously by making a distance between a gate and a source shorter than that between the gate and a drain in a field-effect transistor with a Schottky barrier. CONSTITUTION:The films of SiO2 11 and Si3N4 12 are formed on GaAs 10. P is implanted selectively, and an etching rate is accelerated only in an ion implanting section 11' in SiO2 11. A photo-resist 13' is shaped, and only Si3N4 12 in an opening is removed selectively through etching. When SiO2 11, 11' are etched while using Si3N4 12 as a mask, SiO2 11, 11' are etched asymmetrically in the left and the right of the opening section. A metal is evaporated, and a Schottky barrier by a gate electrode 14' is formed on the substrate 10. A source electrode 15s and a drain electrode 15d are shaped. The gate electrode 14' is offset automatically on the source electrode 15s side, thus largely expecting the improvement of performance. |
