| 摘要 |
PURPOSE:To simplify the manufacturing process and impove the characteristics by a method wherein a p type gate electrode is formed at the first step by using a high melting point metal, and a p type impurity is ion-implanted via this film. CONSTITUTION:An active layer 2, a tungsten film 3 and a positive resist 4 having an aperture are formed on a semi-insulation GaAs substrate 1. The resist 4 is removed after implantation of Mg through the film 3 and evaporation of an SiO film 6. Thereafter, Si ions are implanted after the film 3 is removed by using the film 6 as a mask. Next, the implantation Mg and Si are activated by heat treatment in an As atmosphere after removal of the remaining SiO film 6, resulting in the formation of a p type layer under the film 3 and an n<+> layer 7 on both sides thereof. Finally, source/drain electrodes 8 are formed, accrodingly, the self-aligned p-n junction GaAsFET is produced. |
